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advance product information july 29, 2005 1 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com 4 watt 802.11a packaged amplifier TGA2921-SG key features ? 4.9 - 6 ghz application frequency range ? 11 db nominal gain @ 8v 800ma ? 36 dbm nominal p1db @ 8v 800ma ? 2.5% evm at 26 dbm output power ? imd3 -50dbc @ 24dbm scl, typical ? bias conditions: 7-9 v @ 700-800 ma (quiescent) ?0.5 m m hfet technology ? 2 lead cu base smt package fixtured measured performance bias conditions: vd = 8 v, idq =800 ma performance data taken @ in a 5.75ghz application circuit primary applications ? 802.11a wlan bridge amplifiers ? u-nii band hpa ? c-band pt-pt and pt-multi pt radio the TGA2921-SG hpa provides 11 db of gain, 4 w of output power across 4.9 - 6 ghz and 2.5% evm at 26 dbm output power. the device is ideally suited for high linearity, high power wireless data applications such as 802.11a wlan bridge amplifiers, u-nii and point- to-point or point-to-multi-point non- line of sight radios. the package has a high thermal conductivity copper base. internal partial matching simplifies system board layout by requiring a minimum of external components. lead-free & rohs compliant. evaluation boards are available. product description -12 -9 -6 -3 0 3 6 9 12 5 5.2 5.4 5.6 5.8 6 6.2 6.4 6.6 6.8 7 frequency (ghz) gain (db) -20 -15 -10 -5 0 5 10 15 20 return loss (db) gain input output 0 5 10 15 20 25 30 35 40 14 16 18 20 22 24 26 28 30 pin (dbm) pout (dbm) & gain (db) 0 200 400 600 800 1000 1200 1400 1600 ids (ma) gain pout ids note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice.
advance product information july 29, 2005 2 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com table i maximum ratings 1/ symbol parameter value notes vd drain supply voltage 10 v 2/ vg gate supply voltage range 0 v to -5 v idq drain supply current (quiescent) 2 a 2/ | ig | gate current 38 ma p in input continuous wave power 30 dbm 2/ p d power dissipation 7.9 w 2/, 3 / t ch operating channel temperature 175 c4/ t m mounting temperature (30 seconds) 260 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this bias condition with a base plate temperature of 85 0 c, the mttf life is 2 e+8 hours. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. tga2921-epu-sg
advance product information july 29, 2005 3 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com table iii thermal information parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of package) vd = 8 v i d = 800 ma (quiescent) pdiss = 6.4 w 155 11 1.6 e+9 note: package backside snpb soldered to carrier at 85 c baseplate temperature. at saturated output power, the dc power consumption is 11.2 w with 4 w rf power delivered to the load. power dissipated is 7.2 w and the temperature rise in the channel is 79 c. table ii rf characterization table (t a = 25 q c, nominal) (vd = 8 v, idq = 800 ma) symbol parameter test condition typical units gain small signal gain f = 5.75 ghz 11 db irl input return loss f = 5.75 ghz 12 db orl output return loss f = 5.75 ghz 7 db p1db output power @ p1db f = 5.75 ghz 36 dbm tga2921-epu-sg
advance product information july 29, 2005 4 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com bias conditions: vd = 7 v, idq = 700 ma measured fixtured data application circuit tuned to 5.75 ghz 25 30 35 40 45 50 55 60 65 70 75 12 14 16 18 20 22 24 26 28 30 output power per tone (dbm) imd3 level (dbc) 5.6ghz 5.7ghz 5.8ghz 5.9ghz tga2921-epu-sg -12 -9 -6 -3 0 3 6 9 12 5 5.2 5.4 5.6 5.8 6 6.2 6.4 6.6 6.8 7 frequency (ghz) gain (db) -20 -15 -10 -5 0 5 10 15 20 return loss (db) gain input output 0 5 10 15 20 25 30 35 40 14 16 18 20 22 24 26 28 30 pin (dbm) pout (dbm) & gain (db) 0 200 400 600 800 1000 1200 1400 1600 ids (ma) gain pout ids
advance product information july 29, 2005 5 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com measured fixtured data application circuit tuned to 5.75 ghz bias conditions: vd = 8 v, idq = 800 ma 25 30 35 40 45 50 55 60 65 70 75 12 14 16 18 20 22 24 26 28 30 output power per tone (dbm) imd3 level (dbc) 5.6ghz 5.7ghz 5.8ghz 5.9ghz tga2921-epu-sg -12 -9 -6 -3 0 3 6 9 12 5 5.2 5.4 5.6 5.8 6 6.2 6.4 6.6 6.8 7 frequency (ghz) gain (db) -20 -15 -10 -5 0 5 10 15 20 return loss (db) gain input output 0 5 10 15 20 25 30 35 40 14 16 18 20 22 24 26 28 30 pin (dbm) pout (dbm) & gain (db) 0 200 400 600 800 1000 1200 1400 1600 ids (ma) gain pout ids
advance product information july 29, 2005 6 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com bias conditions: vd = 8 v, idq = 800 ma measured fixtured data application circuit tuned to 5.75 ghz 25 30 35 40 45 50 55 60 65 70 75 12 14 16 18 20 22 24 26 28 30 output power per tone (dbm) imd3 level (dbc) 5.6ghz 5.7ghz 5.8ghz 5.9ghz tga2921-epu-sg 0 5 10 15 20 25 30 35 40 14 16 18 20 22 24 26 28 30 pin (dbm) pout (dbm) & gain (db) 0 200 400 600 800 1000 1200 1400 1600 ids (ma) gain pout ids -12 -9 -6 -3 0 3 6 9 12 5 5.2 5.4 5.6 5.8 6 6.2 6.4 6.6 6.8 7 frequency (ghz) gain (db) -20 -15 -10 -5 0 5 10 15 20 return loss (db) gain input output
advance product information july 29, 2005 7 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com measured fixtured data application circuit tuned to 5.75 ghz tga2921-epu-sg bias conditions: vd = 8 v, idq = 800 ma ofdm 64 qam 0 1 2 3 4 5 6 7 8 9 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 output (dbm) evm% 5.6 5.7 5.8 5.9
advance product information july 29, 2005 8 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com s-parameter data bias conditions: vd = 8v, idq = 800 ma tga2921-epu-sg frequency s11 s21 s12 s22 ghz mag (db) deg mag (db) deg mag (db) deg mag (db) deg 2 -0.922 149.46 4.656 24.256 -29.3 -37.522 -3.505 150.7 2.2 -0.981 143.96 3.92 16.783 -29.209 -42.194 -3.475 147.28 2.4 -1.05 138.28 3.307 9.155 -29.406 -47.499 -3.418 143.98 2.6 -1.036 132.61 2.795 1.767 -29.243 -53.754 -3.339 140.6 2.8 -1.03 126.31 2.386 -5.879 -29.775 -57.493 -3.311 137.76 3 -1.106 119.81 2.016 -13.755 -29.396 -61.715 -3.271 134.27 3.2 -1.098 113.17 1.728 -21.748 -29.382 -66.942 -3.201 131.09 3.4 -1.158 106 1.449 -29.653 -28.846 -68.808 -3.296 128.07 3.6 -1.199 99.251 1.243 -37.913 -29.221 -75.622 -3.28 125.27 3.8 -1.197 91.493 1.095 -46.321 -28.642 -80.881 -3.367 121.37 4 -1.227 83.195 1.01 -55.325 -28.672 -86.873 -3.489 118.05 4.2 -1.264 75.815 0.951 -64.172 -28.853 -88.318 -3.638 114.71 4.4 -1.243 67.974 0.965 -73.477 -28.391 -94.42 -3.798 111.03 4.6 -1.316 60.333 1.001 -82.808 -28.139 -99.236 -3.988 106.7 4.8 -1.289 53.55 1.067 -92.017 -28.186 -107.82 -4.162 102.8 5 -1.294 46.85 1.281 -102.18 -27.341 -112.38 -4.502 97.583 5.2 -1.386 40.476 1.557 -112.99 -26.85 -117.15 -4.839 93.32 5.4 -1.525 35.141 2.047 -124.38 -25.843 -122.68 -5.124 90.569 5.6 -1.722 30.104 2.69 -137.43 -25.035 -129.03 -5.22 87.491 5.8 -2.236 25.326 3.567 -152.77 -24.04 -140.21 -4.99 85.128 6 -3.267 20.912 4.543 -172.21 -22.9 -152.51 -4.534 81.826 6.2 -5.727 20.622 5.836 161.48 -21.466 -171.62 -3.592 76.362 6.4 -8.146 54.06 6.174 121.79 -20.988 155.54 -3.108 62.283 6.6 -3.358 70.677 3.551 76.907 -23.371 115.14 -5.439 54.397 6.8 -1.106 62.277 -1.382 42.823 -27.734 90.23 -6.671 72.529 7 -0.517 55.836 -7.259 20.341 -33.708 71.447 -4.576 84.699 7.2 -0.449 51.619 -14.016 11.985 -39.475 67.146 -2.75 86.182 7.4 -0.855 48.505 -18.186 50.179 -42.265 15.613 -1.661 85.135 7.6 -1.164 57.94 -13.962 6.444 -36.502 -86.187 -0.821 84.391 7.8 -0.463 56.854 -21.186 -27.207 -38.617 -127.41 -0.482 83.611 8 -0.351 57.361 -29.004 -44.161 -38.272 -104.42 -0.436 83.279 8.2 -0.301 59.013 -36.991 -63.144 -29.615 -137.1 -0.986 89.948 8.4 -0.324 62.41 -39.741 -104.49 -31.885 -159.36 -0.308 92.761 8.6 -0.231 67.099 -36.528 -157.52 -31.506 -162.78 -0.12 94.847 8.8 -0.16 72.616 -34.932 -167.76 -31.247 -163.91 -0.054 96.36 9 -0.061 78.923 -30.382 -177.25 -30.393 -165.96 -0.043 96.806 )cvg &tckp 5?2ctcogvgt 4ghgtgpeg2ncpg
advance product information july 29, 2005 9 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com side view bias procedure 1. ensure no rf power is applied to the device. 2. pinch off device by setting vg to C3v. 3. increase vd to 8.0v while monitoring drain current. 4. increase vg until drain current reaches 800 ma. 5. apply rf power. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. packaged dimensional drawing tga2921-epu - sg tga2921-epu-sg top view
advance product information july 29, 2005 10 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com 5.8 ghz application circuit schematic tga2921-epu-sg pcb is 20 mil thick rogers 4003 substrate. the schematic is for small signal approach only
advance product information july 29, 2005 11 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com typical evaluation board layout * *the layout is a general purpose drawing that needs to be tuned for the specific application. pcb is ro4003 20 mil thickness, 0.5 oz standard copper cladding, with e r = 3.38. tga2921-epu-sg contact triquint applications engineering for additional info external component listing part type reference description capacitor c1 avx06035j4r7bbt, 4.7 pf capacitor c2 avx06035j1r2bbt, 1.2 pf capacitor c3 1uf capacitor c4 avx06035j3r9bbt, 3.9 pf capacitor c5 4.7 uf capacitor c6 avx06035j1r2bbt, 1.2 pf resistor r1 0805, 10 w
advance product information july 29, 2005 12 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com ordering information part package style TGA2921-SG smt gull wing (formed leads) tga2921-epu-sg recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 C 120 sec @ 140 C 160 c 60 C 180 sec @ 150 C 200 c time above melting point 60 C 150 sec 60 C 150 sec max peak temperature 240 c260 c time within 5 c of peak temperature 10 C 20 sec 10 C 20 sec ramp-down rate 4 C 6 c/sec 4 C 6 c/sec

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